Low-Temperature Quasi-Direct Copper–Copper Bonding with a Thin Platinum Intermediate Layer Prepared by Atomic Layer Deposition-Reference-Cited by-同舟云学术

Low-Temperature Quasi-Direct Copper–Copper Bonding with a Thin Platinum Intermediate Layer Prepared by Atomic Layer Deposition

Published:2020 Issue:0 Volume:13 Page:E19-014-1-E19-014-9
ISSN:1883-3365
Container-title:Transactions of The Japan Institute of Electronics Packaging
language:en
Short-container-title:Transactions of The Japan Institute of Electronics Packaging

Author:

Kuwae Hiroyuki¹,Yamada Kosuke¹,Kamibayashi Takumi¹,Momose Wataru²,Shoji Shuichi¹,Mizuno Jun³⁴

Affiliation:

1. Department of Electronic and Physical Systems, Waseda University

2. ALD Japan, Inc.

3. Research Organization for Nano and Life innovation, Waseda University

4. Organization for Regional Collaborative Research and Development, Tokyo University of Science

Publisher

Japan Institute of Electronics Packaging

Link

https://www.jstage.jst.go.jp/article/jiepeng/13/0/13_E19-014-1/_pdf

Reference31 articles.

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