Electro-Thermal Simulation of Microwave GaN FET Fast-Switching Power Supply
Author:
Affiliation:
1. Graduate School of Information and Engineering, The University of Electro-Communications
Publisher
Japan Institute of Electronics Packaging
Subject
Electrical and Electronic Engineering
Link
https://www.jstage.jst.go.jp/article/jiep/20/4/20_211/_pdf
Reference11 articles.
1. 3) A. Disserand, P. Bouysse, A. Martin, R. Quere, O. Jardel, and L. Lapierre: “A new high speed and high efficiency GaN HEMT switching cell for envelope tracking modulators,” Proceedings of the 46th European Microwave Conference, pp. 281-284, 2016
2. 4) M. Rodriguez, Y. Zhang, and D. Maksimovic: “High-frequency PWM buck converters using GaN-on-SiC HEMTs,” IEEE Trans. Power Electronics, Vol. 29, No. 5, pp. 2462-2473, May 2014
3. 6) J. B. King and T. J. Brazil: “Nonlinear electrothermal GaN HEMT model applied to high-efficiency power amplifier design,” IEEE Trans. Microw. Theory Tech., Vol. 61, No. 1, pp. 444-454, Jan. 2013
4. 7) C. Wang, Y. Xu, X. Yu, C. Ren, Z. Wang, H. Lu, T. Chen, B. Zhang, and R. Xu: “An electrothermal model for empirical large-signal modeling of AlGaN/GaN HEMTs including self-heating and ambient temperature effects,” IEEE Trans. Microw. Theory Tech., Vol. 62, No. 12, pp. 2878-2887, Dec. 2014
5. 9) C. G. Tua, T. Pratt, and A. I. Zaghloul: “A study of interpulse instability in Gallium Nitride power amplifiers in multifunction radars,” IEEE Trans. Microw. Theory Tech., Vol. 64, No. 11, pp. 3732-3747, Nov. 2016
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