Relation between Growth Temperature and the Structure of SiC Crystals Grown by Sublimation Method-Reference-Cited by-同舟云学术

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Relation between Growth Temperature and the Structure of SiC Crystals Grown by Sublimation Method

Published:1968 Issue:877 Volume:76 Page:313-319
ISSN:0009-0255
Container-title:Journal of the Ceramic Association, Japan
language:en
Short-container-title:Journal of the Ceramic Association, Japan

Author:

INOMATA Yoshizo¹,INOUE Zenzabro¹,MITOMO Mamoru¹,SUZUKI Hiroshige¹

Affiliation:

1. National Institute for Researches in Inorganic Materials

Publisher

Ceramic Society of Japan

Link

http://www.jstage.jst.go.jp/article/jcersj1950/76/877/76_877_313/_pdf

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1. Densification, $${\beta} \to {\alpha}$$ transformation and nanoindentation studies of SiCW/SiC composites fabricated by spark plasma sintering;Journal of the Korean Ceramic Society;2024-04-02

2. Vapor Deposition Growth of SiC Crystal on 4H-SiC Substrate by Molecular Dynamics Simulation;Crystals;2023-04-23

3. On correlation between β→α transformation and densification mechanisms in SiC during spark plasma sintering;Scripta Materialia;2016-04

4. Silicon Carbide- and Boron Carbide-Based Hard Materials;Ceramics Science and Technology;2014-05-23

5. Governing factors for the formation of 4H or 6H-SiC polytype during SiC crystal growth: An atomistic computational approach;Journal of Crystal Growth;2014-03

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