Near-Infrared Light Emissions from Er-doped ZnO Thin Films Induced by an Electrical Field-Reference-Cited by-同舟云学术

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Near-Infrared Light Emissions from Er-doped ZnO Thin Films Induced by an Electrical Field

Published:2007 Issue:1341 Volume:115 Page:341-343
ISSN:0914-5400
Container-title:Journal of the Ceramic Society of Japan
language:en
Short-container-title:J. Ceram. Soc. Japan

Author:

TANAKA Shigeru¹,ISHIKAWA Yukari¹,SHIBATA Noriyoshi¹

Affiliation:

1. Japan Fine Ceramics Center

Publisher

Ceramic Society of Japan

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry,Ceramics and Composites

Link

http://www.jstage.jst.go.jp/article/jcersj/115/1341/115_1341_341/_pdf

Reference8 articles.

1. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

2. Er-doped ZnO thin films grown by pulsed-laser deposition

3. Highly erbium-doped zinc–oxide thin film prepared by laser ablation and its 1.54 μm emission dynamics

4. Influence of Annealing on the 1.5 μm Light Emission of Er-doped ZnO Thin Films and its Crystal Quality

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1. NIR luminescence from erbium doped (100− x )SiO 2 : x ZnO powders obtained by soft chemical synthesis;Journal of Luminescence;2016-02

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