Highly erbium-doped zinc–oxide thin film prepared by laser ablation and its 1.54 μm emission dynamics
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1326470
Reference32 articles.
1. Evaluation of erbium‐doped silicon for optoelectronic applications
2. Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode
3. Selective formation of an efficient Er‐O luminescence center in GaAs by metalorganic chemical vapor deposition under an atmosphere containing oxygen
4. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials
5. Erbium luminescence in doped amorphous silicon
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