Abstract
Abstract
Er-doped ZnO thin films on a SiO2/Si substrate were fabricated by radio frequency magnetron sputtering, in which embedded Si nanoparticles (NPs) were formed by ion implantation and subsequent thermal annealing. The effects of Si NPs on the Er photoluminescence (PL) at 1.54 μm were investigated. In addition to the typical emission at 1.54 μm from Er3+, a new 1.16-μm emission peak was also observed after a thermal treatment. Further annealing resulted in shift of emission intensity between the 1.16- and 1.54-μm luminescence features. The observed Si nanoparticles (NPs) were ∼4 nm in diameter. The formation of new components Zn2SiO4 and Er2Si2O7 was also presented in this study. The 1.16-μm luminescence is attributed to the Si NPs, and the suppression of Si NPs related emission is caused by consumption of Si in the formation of Er silicate and zinc silicide and the energy transfer between Si NPs and Er3+. The intensity of Er3+ related 1.54-μm PL can be modulated by the Si NPs fabricated by implantation and optimizing the annealing condition.
Funder
China Postdoctoral Science Foundation
National Natural Science Foundation of China
Natural Science Foundation of Shandong Province
Subject
Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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