Anisotropic constitutive model coupled with damage for Sn-rich solder: Application to SnAgCuSb solder under tensile conditions

Author:

Zhang Zhao1,Liu Sheng1234ORCID,Ma Kun1,Chen Zhiwen1,Qian Zhengfang5,Lee Ning-Cheng6

Affiliation:

1. Laboratory for Electronic Manufacturing and Packaging Integration, The Institute of Technological Sciences, Wuhan University, Wuhan University, Wuhan, China

2. School of Power and Mechanical Engineering, Wuhan University, Wuhan, China

3. School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Huazhong University of Science and Technology, Wuhan, China

4. School of Microelectronics, Wuhan University, Wuhan University, Wuhan, China

5. College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen University, Shenzhen, China

6. Indium Corporation of America, Utica, USA

Abstract

With the rapid development of microelectronics and nanoelectronics, Moore law has significantly slowed down and More than Moore based system in packaging (SiP) is expected to be more and more important, at least for next one to two decades. Mechanical behaviors of interconnect materials such as solders are critical for yield in processes and reliability in testing and operation. Based on the framework of crystal plastic theory and continuum damage mechanics, an anisotropic constitutive model coupled with damage was developed to describe the deformation behaviors of Sn-rich solder. In the proposed model, the inelastic shear rate function was presented by hyperbolic sinusoidal form and power law form. For the damage evolution law, the total shear strain was chosen as the damage function variable. The proposed model was implemented into the general finite element software ABAQUS by forward Euler integration procedure. Some simulation examples were performed to verify the proposed model by comparing the simulation results with the experiments at uniaxial tensile conditions with SnAgCuSb solder chosen as the Sn-rich solder. The tensile stress-strain curves of the simulation results agreed well with the experiments at small strain under different temperatures and strain rates. The simulated stress-rupture stages showed reasonable accuracy with the experiments under four representative tensile conditions. Different tensile stress-strain curves of single grains with orientation of (0-0-0)°, (0-45-0)°, and (0-90-0)° were obtained under the same loading conditions, with an inverse relationship between the tensile strength and elongation. This relationship was in accordance with a referable literature. All these results indicate that the proposed model can describe the deformation behaviors of SnAgCuSb solder well under the tensile conditions in consideration of the mechanical anisotropy and the damage evolution.

Funder

National Key R&D Program of China

National Natural Science Foundation of China

Hubei Provincial Natural Science Foundation of China

Publisher

SAGE Publications

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science,Computational Mechanics

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