The optimization and fabrication of high electron mobility transistors integrated with microstructure

Abstract

In this paper, trench-gate high electron mobility transistors, which have three channel directions with micro-cantilevers, have been design and fabricated. The action of the trench-gate direction on the sensitivity of the microstructure has been considered based on high electron mobility transistors as sensitive units which are located at the root of the micro-cantilever. The microstructure has been fabricated by using the process of dry and wet etching a GaAs substrate. Through selecting suitable material and appropriate mask layout, the high electron mobility transistors have been protected as sensitive units.