Strain Sensitivity of AlGaN/GaN HEMT Structures for Sensing Applications-Reference-Cited by-同舟云学术

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Strain Sensitivity of AlGaN/GaN HEMT Structures for Sensing Applications

Published:2006-07-01 Issue:7 Volume:E89-C Page:1037-1041
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Transactions on Electronics

Author:

YILMAZOGLU O.

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of GaN Cap Layer on E-Mode AlGaN/GaN HEMT Device with Nitrogen Implanted Gate Using TCAD Simulations;2023-09-06

2. Effect of surface potential pinning on strain behavior of AlGaN/GaN device structures;Applied Physics Letters;2023-04-24

3. Adaptive wind-evoked power devices for autonomous motor control applications;Journal of Materials Chemistry C;2022

4. Research on the Force-Sensitive Characteristic of InAs QD Embedded in HEMT;Micromachines;2021-11-18

5. Piezotronic effect in a normally off p-GaN/AlGaN/GaN HEMT toward highly sensitive pressure sensor;Applied Physics Letters;2021-06-14

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