Aluminum Gallium Nitride (GaN)/GaN High Electron Mobility Transistor-Based Sensors for Glucose Detection in Exhaled Breath Condensate-Reference-Cited by-同舟云学术

Aluminum Gallium Nitride (GaN)/GaN High Electron Mobility Transistor-Based Sensors for Glucose Detection in Exhaled Breath Condensate

Author:

Chu Byung Hwan¹,Kang Byoung Sam¹,Hung Sheng Chun²,Chen Ke Hung¹,Ren Fan¹,Sciullo Andrew³,Gila Brent P.³,Pearton Stephen J.³

Affiliation:

1. Department of Chemical Engineering, University of Florida, Gainesville, Florida

2. Department of Physics, National Central University, Jhong-Li 320, Taiwan

3. Department of Material Science and Engineering, University of Florida, Gainesville, Florida

Publisher

SAGE Publications

Subject

Biomedical Engineering,Bioengineering,Endocrinology, Diabetes and Metabolism,Internal Medicine

Link

Reference36 articles.

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