Analysis and Design of MBCFET and Their Circuit Application in Current Mirror and DRAM

Abstract

This research paper addresses the challenges associated with transistor downscaling, particularly short channel effects (SCEs) in conventional silicon metal-oxide-semiconductor field-effect transistors (Si MOSFETs), and introduces Multi-Bridge-Channel MOSFETs (MBCFETs) as a potential solution. This study explores their attributes, emphasizing flexibility and faster switching, and comprehensively examines device parameters, fabrication processes, and simulation frameworks, offering a detailed analysis of critical factors influencing MBCFET performance. Investigating the intricate relationship between nanosheet dimensions and device characteristics, the research provides insights for optimized design and integration into future semiconductor technologies. The research looks at how the gate electrode's work function, the nanosheets' thickness and count, and the different types of doping affect important device properties such as transconductance, drive current, OFF-state current, and threshold voltage. Furthermore, the study is being carried out to form a current mirror and DRAM circuit by using the proposed MBCFET. This study demonstrates the transformative potential of MBCFETs in high-performance electronic applications.