Implementation of Ripple Carry Adder and Carry Save Adder using 7nm FinFET Technology

Abstract

The semiconductor industry’s continuous effort to miniaturize and be more powerful to increase the overall performance. This has led to the use of FinFET technology for packing more transistors into a smaller space and using power more efficiently compared to planner MOS technologies. Compared to the MOS technology, FinFET technology provides better advantages such as improved transistor performance, lower leakage currents, and enhanced power efficiency. The proposed work includes integrating fundamental components like the NAND gate, 2:1 MUX, and full adder (FA). These components are combined to build both Ripple Carry Adder (RCA) and Carry Save Adder (CSA). The work is carried out using 7nm FinFET technology and this research involves a thorough analysis of power consumption and propagation delay, with the implementation carried out using the Cadence Virtuoso tool. The study highlights the improved performance of 7nm FinFET technology compared to MOSFETs.