Design and Simulation of ETL-Free Perovskite/Si Tandem Cell with 33% Efficiency-Reference-Cited by-同舟云学术

Design and Simulation of ETL-Free Perovskite/Si Tandem Cell with 33% Efficiency

Published:2022-12-31 Issue: Volume:13 Page:137-141
ISSN:2415-1513
Container-title:WSEAS TRANSACTIONS ON ELECTRONICS
language:en
Short-container-title:

Author:

Saeed Ahmed¹,Mousa Mohamed¹,Salah Mostafa M.¹,Zekry A.²,Abouelatta Mohamed²,Shaker Ahmed²,Amer Fathy Z.³,Mubarak Roaa I.³

Affiliation:

1. Electrical Engineering Department, Future University in Egypt, Cairo 11835, EGYPT

2. Electrical Engineering Department, Ain Shams University, Cairo 11535, EGYPT

3. Faculty of Engineering, Helwan University, Cairo 11795, EGYPT

Abstract

Multi-junction (tandem) cell using MAPbI3-xClx and silicon as absorbers has been designed and simulated in this paper. The thickness of the silicon layer in the bottom cell is 2 μm allowing it to absorb the transmitted spectrum from the perovskite subcell as much as possible. The thickness of the MAPbI3-xClx layer is optimized using a proposed algorithm. The output metrics show that the optimum thickness of the MAPbI3-xClx layer was 205 nm. The simulation outputs showed that the proposed tandem cell has an efficiency of 33.09% with an open circuit voltage of 1.9 V and a short circuit current of 19.95 mA/cm2 .

Publisher

World Scientific and Engineering Academy and Society (WSEAS)

Subject

Electrical and Electronic Engineering

Reference21 articles.

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