Design and Implementation of High Speed and Low Power 12-bit SAR ADC using 22nm FinFET
Author:
Affiliation:
1. Electronics and Communication Engineering Department, RV College of Engineering, Bengaluru, Affiliated to Visvesvaraya Technological University, BELAGAVI, KARNATAKA, INDIA
Abstract
Publisher
World Scientific and Engineering Academy and Society (WSEAS)
Subject
Artificial Intelligence,General Mathematics,Control and Systems Engineering
Reference20 articles.
1. Aili Wangand C.-J. Richard Shi, “A 10-bit 50-MS/s SAR ADC with 1 fJ/Conversion in 14 nm SOI FinFET CMOS,” Integration, the VLSI journal, vol.62,pp.246-257, June 2018.
2. L. Kull et al., "A 24–72-GS/s 8-b TimeInterleaved SAR ADC With 2.0–3.3- pJ/Conversion and >30 dB SNDR at Nyquist in 14-nm CMOS FinFET," in IEEE Journal of Solid-State Circuits, vol. 53, no. 12, pp. 3508-3516, December. 2018
3. J. Hudner et al., "A 112Gb/s PAM4 Wireline Receiver Using a 64-Way Time-Interleaved SAR ADC in 16nm FinFET," IEEE Symposium on VLSI Circuits, pp. 47-48, 2018.
4. S. Hsieh and C. Hsieh, "A 0.44- fJ/Conversion-Step 11-Bit 600-kS/s SAR ADC With Semi-Resting DAC," IEEE Journal of Solid-State Circuits, vol. 53, no. 9, pp. 2595-2603, September. 2018
5. K. Okuno, K. Obata, T. Kato and K. Sushihara, "An 800-MHz 8-bit High Speed SAR ADC in 16nm FinFET process," IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK), pp. 24-25,2017.
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