Proposal of Intelligent Polishing System by Artificial Intelligence Using Neural Networks

Author:

YOSHISAKI Daichi,UNEDA Michio,SHIBUYA Kazutaka,MIYASHITA Tadakazu,ISHKAWA Ken-ichi

Publisher

Japan Society for Precision Engineering

Subject

Mechanical Engineering

Reference6 articles.

1. 1) International Energy Agency (IEA): World Energy Outlook 2018, https://www.bp.com/content/dam/bp/businesssites/en/global/corporate/pdfs/energy-economics/energy-outlook/bp-energyoutlook-2018.pdf, (2019/2/4).

2. 5) A.T.Budnikou, E.A.Vovk, S.I.Krivonogou, A.Ya.Danko, O.A.Lukiyenko: Anisotropy of sapphire properties associated with chemical - mechanical polishing with silica, Functional Materials, 17, 4 (2010) 488.

3. 6) JieWang, Tongqing, Wang, Guoshun Pan, and Xinchun Lu: Mechanism of GaN CMP Based on H2O2 Slurry Combined with UV Light, ECS Journal of Solid State Science and Technology, 4, 3 (2015) 112.

4. 12) Michio UNEDA, Yuki MAEDA, Kazutaka SHIBUYA, Yoshio NAKAMURA, Daizo ICHIKAWA, Kiyomi FUJII and Ken-ichi ISHIKAWA: Influence of Pad Surface Asperity on Removal Rate in Chemical Mechanical Polishing of Large-Diameter Silicon Wafer Applied to Substrate of GaN-Based LEDs, Sensors and Materials, 26, 6 (2014) 435.

5. 21) Akira Isobe, Msatoshi Akaji, Shuhei Kurokawa: Proposal of New Polishing Mechanism Based on Feret's Diameter of Contact Area between Polishing Pad and Wafer, Japanese Journal of Applied Physics, 52 (2013) 12503 1.

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