Features of growing Si- and Si1-xGex-single-crystal films from solution-melt based on tin-Reference-Cited by-同舟云学术

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Features of growing Si- and Si_1-xGe_x-single-crystal films from solution-melt based on tin

Published:2022 Issue:4 Volume:26 Page:
ISSN:1027-4642
Container-title:Journal of Physical Studies
language:
Short-container-title:J. Phys. Stud.

Author:

Razzokov A. Sh.^ORCID,Saidov A. S.^ORCID,Girzhon V. V.^ORCID,Smolyakov O. V.^ORCID

Publisher

Ivan Franko National University of Lviv

Subject

General Physics and Astronomy

Reference20 articles.

1. E. M. T. Fadaly et al., Nature 580, 205 (2020);

2. M. Nakahara et al., MRS Adv. 4, 749 (2019);

3. Md. Mahfuz Alam et al., Appl. Phys. Express 12, 081005 (2019);

4. K. W. Jo, W. K. Kim, M. Takenaka, S. Takagi, Appl. Phys. Lett. 114, 062101 (2019);

5. Sh. N. Usmonov, Appl. Sol. 52, 211 (2016);

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