Laser Beam Based ESD Defect Localization in ICs

Author:

Beaudoin Félix1,Perdu Philippe1,Desplats Romain1,Doche Emmanuel2,Wislez Alain2,Beauchêne Thomas3,Lewis Dean3,Carisetti Dominique4,Trémouilles David5,Bafleur Marise5

Affiliation:

1. CNES-THALES Laboratory, Toulouse, France

2. LCIE, Toulouse, France

3. IXL, Université Bordeaux, Talence, France

4. THALES Research and Technology, Orsay, France

5. LAAS, Toulouse, France

Abstract

Abstract The application of laser beam based techniques for ESD defect localization in silicon and gallium arsenide integrated circuits is studied. The Thermal Laser Stimulation technique (OBIRCH, TIVA) is shown to precisely localize electrostatic discharge (ESD) defects under low voltage and current consumption, thus avoiding device or defect degradation upon testing. It is also shown that nonbiased Thermal Laser Stimulation (SEI) tests can localize ESD defects in the silicon substrate. Physical analysis revealed that a thermocouple composed of molten silicon with crystalline silicon generated a Seebeck voltage sufficiently large to be detected. Finally, the pulsed Optical Beam Induced Current technique (OBIC) under no bias condition was evaluated and compared to both biased and nonbiased Thermal Laser Stimulation techniques. It proved to be complementary as it offers a different insight into the ESD induced degradation.

Publisher

ASM International

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