Advanced gate dielectric materials for sub-100 nm CMOS-Reference-Cited by-同舟云学术

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Advanced gate dielectric materials for sub-100 nm CMOS

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Container-title:Digest. International Electron Devices Meeting,
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Author:

Iwai H.,Ohmi S.,Akama S.,Ohshima C.,Kikuchi A.,Kashiwagi I.,Taguchi J.,Yamamoto H.,Tonotani J.,Kim Y.,Ueda I.,Kuriyama A.,Yoshihara Y.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8330/25999/01175917.pdf?arnumber=1175917

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