Reliability of Enhancement-mode AlGaN/GaN HEMTs Fabricated by Fluorine Plasma Treatment
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/4418847/4418848/04418954.pdf?arnumber=4418954
Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Investigation of a Novel Enhancement-Mode Al0.25Ga0.75N/AlN/Al X Ga(1-X)N/GaN MIS-HEMT for High Vth and Low R on,sp;IEEE Transactions on Electron Devices;2023-07
2. Fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress;Chinese Physics B;2022-10-01
3. Stability of the threshold voltage in fluorine-implanted normally-off AlN/GaN HEMTs co-integrated with commercial normally-on GaN HEMT technology;Microelectronics Reliability;2021-11
4. Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode;Micromachines;2021-10-22
5. High-Al-content heterostructures and devices;Ultrawide Bandgap Semiconductors;2021
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