Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs-Reference-Cited by-同舟云学术

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Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs

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Container-title:IEEE International Electron Devices Meeting 2003
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Author:

Rim K.,Chan K.,Shi L.,Boyd D.,Ott J.,Klymko N.,Cardone F.,Tai L.,Koester S.,Cobb M.,Canaperi D.,To B.,Duch E.,Babich I.,Carruthers R.,Saunders P.,Walker G.,Zhang Y.,Steen M.,Ieong M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8960/28396/01269163.pdf?arnumber=1269163

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strained Silicon-on-Insulator Platform for Co-Integration of Logic and RF—Part II: Comb-Like Device Architecture;IEEE Transactions on Electron Devices;2022-04

2. Analog/RF Performance of Graded Channel Gate Stack Triple Material Double Gate Strained-Si MOSFET with Fixed Charges;Silicon;2021-03-22

3. A lithography-free approach to create Si nanomembranes on flexible substrates;Solid State Communications;2021-02

4. Performance Estimation and Analysis of 3D Trigate HOI FinFET Using Strained Channel for Reduced Area;Lecture Notes in Electrical Engineering;2021

5. Elaboration and characterization of a 200 mm stretchable and flexible ultra-thin semi-conductor film;Nanotechnology;2020-01-17

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