Characterization and Monte Carlo Analysis of Secondary Electrons Induced Program Disturb in a Buried Diffusion Bit-line SONOS Flash Memory-Reference-Cited by-同舟云学术

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Characterization and Monte Carlo Analysis of Secondary Electrons Induced Program Disturb in a Buried Diffusion Bit-line SONOS Flash Memory

Published:2007 Issue: Volume: Page:
ISSN:
Container-title:2007 IEEE International Electron Devices Meeting
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Author:

Tang Chun-Jung,Li C.W.,Wang Tahui,Gu S.H.,Chen P.C.,Chang Y.W.,Lu T.C.,Lu W.P.,Chen K.C.,Lu Chih-Yuan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4418847/4418848/04418894.pdf?arnumber=4418894

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spherical Harmonics Expansion and Multi-Scale Modeling;Springer Handbook of Semiconductor Devices;2022-11-11

2. Program Disturb Induced by Interface-Trap-Assisted Field and Thermal Electron Emission in the Channel of Split-Gate Memory Cell;IEEE Transactions on Device and Materials Reliability;2014-06

3. Performance Improvement of a Virtual-Ground Nonvolatile Charge-Trap Storage nor-Type Memory Cell With Optimized Junction Dosage for 45-nm Generation Node;IEEE Electron Device Letters;2011-06

4. A Novel Random Telegraph Signal Method to Study Program/Erase Charge Lateral Spread and Retention Loss in a SONOS Flash Memory;IEEE Transactions on Electron Devices;2011-03

5. Detailed physical simulation of program disturb mechanisms in Sub-50 nm NAND flash memory strings;2010 International Conference on Simulation of Semiconductor Processes and Devices;2010-09

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