Novel flowable CVD process technology for sub-20nm interlayer dielectrics-Reference-Cited by-同舟云学术

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Novel flowable CVD process technology for sub-20nm interlayer dielectrics

Published:2012-06 Issue: Volume: Page:
ISSN:
Container-title:2012 IEEE International Interconnect Technology Conference
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Author:

Kim Honggun,Lee Seungheon,Lee Jun-Won,Bae ByeongJu,Choi YongSoon,Koh Young-Ho,Yi Hayoung,Hong Eunkee,Kang Mansug,Nam Seok Woo,Kang Ho-Kyu,Chung Chilhee,Park Jinhyung,Cho Namjin,Lee Seungmoo

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6242772/6251555/06251590.pdf?arnumber=6251590

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Bias Frequency on Bottom-Up SiO₂ Gap-Filling Using Plasma-Enhanced Atomic Layer Deposition;ACS Applied Materials & Interfaces;2024-07-29

2. Computational Analysis of the Effects of Nanoscale Confinement on the Structure of Low-k Dielectric Hybrid Organosilicate Materials;IEEE Transactions on Materials for Electron Devices;2024

3. Computational Analysis of the Role of Nanoconfinement on the Reliability of ULK Glasses;2022 IEEE International Interconnect Technology Conference (IITC);2022-06-27

4. Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor;ACS Applied Materials & Interfaces;2016-08-04

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