56 nm pitch copper dual-damascene interconnects with triple pitch split metal and double pitch split via-Reference-Cited by-同舟云学术

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56 nm pitch copper dual-damascene interconnects with triple pitch split metal and double pitch split via

Published:2012-06 Issue: Volume: Page:
ISSN:
Container-title:2012 IEEE International Interconnect Technology Conference
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Author:

Chen James Hsueh-Chung,Waskiewicz Christopher,Fan Susan Su-Chen,Halle Scott,Koay Chiew-seng,Xu Yongan,Saulnier Nicole,Tseng Chia-Hsun,Yin Yunpeng,Mignot Yann,Beard Marcy,Morris Bryan,Horak Dave,Mignot Sylvie,Shobha Hosadurga,Sankarapandian Muthumanickam,van der Straten Oscar,Kelly James J.,Canaperi Donald,Mclellan Erin,Boye Carol,Levin Theodore,Li Juntao,Demarest James,Choi Samuel,Huang Elbert,Liemann Lars,Haran Bala,Arnold John C,Colburn Matthew,Clevenger Larry,Spooner Terry

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6242772/6251555/06251637.pdf?arnumber=6251637

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Overlay error statistics for multiple-exposure patterning;Journal of Micro/Nanolithography, MEMS, and MOEMS;2019-04-04

2. Dual frequency mid-gap capacitively coupled plasma (m-CCP) for conventional and DSA patterning at 10nm node and beyond;SPIE Proceedings;2014-03-28

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