Dual frequency mid-gap capacitively coupled plasma (m-CCP) for conventional and DSA patterning at 10nm node and beyond-Reference-Cited by-同舟云学术

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Dual frequency mid-gap capacitively coupled plasma (m-CCP) for conventional and DSA patterning at 10nm node and beyond

Published:2014-03-28 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Mohanty Nihar,Ko Akiteru,Cole Christopher,Rastogi Vinayak,Kumar Kaushik,Schmid Gerard,Farrell Richard,Ryan Todd,Hosler Erik,Xu Ji,Preil Moshe

Publisher

SPIE

Reference20 articles.

1. International Technology Roadmap for Semiconductors (ITRS) Report (2011) http://www.itrs.net/Links/2011ITRS/Home2011.htm

2. Advanced plasma etch technologies for nanopatterning

3. Extension of patterning technologies down to sub-10 nm half pitch;Mimotogi,2013

4. Advanced plasma etch for the 10 nm node and beyond;Joseph,2013

5. DSA patterning for sub-40 nm pitch features;Raygoza,2013

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