Split-Drain Magnetic Field-Effect Transistor Channel Charge Trapping and Stress Induced Sensitivity Deterioration-Reference-Cited by-同舟云学术

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Split-Drain Magnetic Field-Effect Transistor Channel Charge Trapping and Stress Induced Sensitivity Deterioration

Published:2014-01 Issue:1 Volume:50 Page:1-4
ISSN:0018-9464
Container-title:IEEE Transactions on Magnetics
language:
Short-container-title:IEEE Trans. Magn.

Author:

Yang Zhenyi,Siu Sik-Lam,Tam Wing-Shan,Kok Chi-Wah,Leung Chi-Wah,Lai P. T.,Wong Hei,Tang Wing-Man,Pong P. W. T.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/20/6692884/06693000.pdf?arnumber=6693000

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Simulation Study of Interface Traps Effects of Magnetic Sensitivity in Sectorial SD-MAGFET;2022 5th International Conference on Circuits, Systems and Simulation (ICCSS);2022-05-13

2. Fin-shaped AlGaN/GaN high electron mobility magnetoresistive sensor device;Applied Physics Letters;2021-04-19

3. Thermal stability of sectorial split-drain magnetic field-effect transistors;Microelectronics Reliability;2014-06

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