A Simulation Study of Interface Traps Effects of Magnetic Sensitivity in Sectorial SD-MAGFET-Reference-Cited by-同舟云学术

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A Simulation Study of Interface Traps Effects of Magnetic Sensitivity in Sectorial SD-MAGFET

Published:2022-05-13 Issue: Volume: Page:
ISSN:
Container-title:2022 5th International Conference on Circuits, Systems and Simulation (ICCSS)
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Author:

Yang Zhenyi¹,Zhang Lining¹,Lai P. T.²

Affiliation:

1. Peking University,School of Electronics and Computer Engineering,Shenzhen,China,518055

2. The University of Hong Kong,Department of Electrical and Electronic Engineering,Hong Kong,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9802079/9801889/09802172.pdf?arnumber=9802172

Reference15 articles.

1. Transient Sensitivity of Sectorial Split-Drain Magnetic Field-Effect Transistor

2. Split-Drain Magnetic Field-Effect Transistor Channel Charge Trapping and Stress Induced Sensitivity Deterioration

3. A numerical investigation on effects of lateral Si/SiO2 interface traps on magnetic sensitivity of sectorial SD-MAGFET

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