Carry Chains for Ultra High-Speed SiGe HBT Adders-Reference-Cited by-同舟云学术

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Carry Chains for Ultra High-Speed SiGe HBT Adders

Published:2011-09 Issue:9 Volume:58 Page:2201-2210
ISSN:1549-8328
Container-title:IEEE Transactions on Circuits and Systems I: Regular Papers
language:
Short-container-title:IEEE Trans. Circuits Syst. I

Author:

Gutin A.,Jacob P.,Chu M.,Belemjian P. M.,LeRoy M. R.,Kraft R. P.,McDonald J. F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/8919/6016553/05729350.pdf?arnumber=5729350

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Assessment of THz Performance for a Lateral SiGe HBT on SOI With a Laterally Graded Base;IEEE Transactions on Electron Devices;2018-11

2. Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems;Nanoscale;2015

3. Thermal Modeling of 3-D Stacked DRAM Over SiGe HBT BiCMOS CPU;IEEE Access;2015

4. Design of BiCMOS SRAMs for high‐speed SiGe applications;IET Circuits, Devices & Systems;2014-11

5. Design of High-Speed Register Files Using SiGe HBT BiCMOS Technology;IEEE Transactions on Circuits and Systems II: Express Briefs;2014-03

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