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Novel Radiation Hardening Read/Write Circuits Using Feedback Connections for Spin–Orbit Torque Magnetic Random Access Memory

  • Published:2019-05 Issue:5 Volume:66 Page:1853-1862
  • ISSN:1549-8328
  • Container-title:IEEE Transactions on Circuits and Systems I: Regular Papers
  • language:
  • Short-container-title:IEEE Trans. Circuits Syst. I

Author:

Wang BiORCID,Wang ZhaohaoORCID,Wu BiORCID,Bai Yumeng,Cao KaihuaORCID,Zhao Yuanfu,Zhang Youguang,Zhao WeishengORCID

Funder

National Natural Science Foundation of China

Beihang-Qingdao Research Institute Incubation Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel Radiation Hardened Pre-Discharge Sense Amplifier for Double Data Rate Magnetic Random Access Memory;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-07

2. Novel Radiation Hardened DSOT-MRAM Read Peripheral Circuit With Reduced Sensitive Nodes;IEEE Transactions on Circuits and Systems II: Express Briefs;2023-11

3. High radiation tolerant SOT-MRAM read peripheral circuit with fast data recovery;Physica Scripta;2023-11-01

4. Novel Radiation-Hardened Designs of Hybrid Spintronic/CMOS Circuit for Multi-Node Upset Tolerance;2023 IEEE 23rd International Conference on Nanotechnology (NANO);2023-07-02

5. Machine Learning Assisted Soft Error Variation Analysis of Radiation Hardened MRAM Circuit;2023 IEEE 23rd International Conference on Nanotechnology (NANO);2023-07-02
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