Analysis and Characterization of Defects in FeFETs-Reference-Cited by-同舟云学术

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Analysis and Characterization of Defects in FeFETs

Published:2023-10-07 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Test Conference (ITC)
language:
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Author:

Thapar Dhruv¹,Thomann Simon²,Chaudhuri Arjun¹,Amrouch Hussam²,Chakrabarty Krishnendu³

Affiliation:

1. Duke University,Department of Electrical and Computer Engineering,North Carolina,USA

2. Technical University of Munich (TUM),Chair of AI Processor Design,Germany

3. School of Electrical, Computer and Energy Engineering at Arizona State University (ASU),Arizona,USA

Funder

Semiconductor Research Corporation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10350036/10350038/10350046.pdf?arnumber=10350046

Reference40 articles.

1. Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors;Böscke,2011

2. Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors

3. The fundamentals and applications of ferroelectric HfO2

4. Fundamental Understanding and Control of Device-to-Device Variation in Deeply Scaled Ferroelectric FETs

5. On the Channel Percolation in Ferroelectric FET Towards Proper Analog States Engineering

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lifecycle Management of Emerging Memories;2024 IEEE European Test Symposium (ETS);2024-05-20

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