Cost Effective FinFET Platform for Stand Alone DRAM 1Y and Beyond Memory Periphery-Reference-Cited by-同舟云学术

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Cost Effective FinFET Platform for Stand Alone DRAM 1Y and Beyond Memory Periphery

Published:2018-05 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE International Memory Workshop (IMW)
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Author:

Spessot Alessio,Sharan Neha,Oh Hyungrock,Ritzenthaler Romain,Litta Eugenio Dentoni,O'Sullivan Barry,Mallik Arindam,De Keersgieter An,Parvais Bertrand,Sherazi Yasser,Machkaoutsan Vladimir,Kim Cheolgyu,Fazan Pierre,Mocuta Dan,Mocuta Anda,Horiguchi Naoto

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8385224/8388765/08388823.pdf?arnumber=8388823

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced Thermal Stability and Reduced Specific Contact Resistivity in Titanium-Based Ohmic Contact With an Ultra-Thin Molybdenum Interlayer;IEEE Electron Device Letters;2024-07

2. Insertion of Hafnium Interlayer to Improve the Thermal Stability of Ultrathin TiSi_x in TiSi_x/n⁺-Si Ohmic Contacts;IEEE Transactions on Electron Devices;2022-06

3. Thermal stability issue of ultrathin Ti-based silicide for its application in prospective DRAM peripheral 3D FinFET transistors;Journal of Materials Science: Materials in Electronics;2021-08-28

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