FinFET Based SRAM Design for Low Standby Power Applications
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/4148982/4148983/04149023.pdf?arnumber=4149023
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optimization Techniques for Reliable Low Leakage GNRFET-Based 9T SRAM;IEEE Transactions on Device and Materials Reliability;2022-12
2. Performance Investigation of FinFET-Based MO-CCII and its Applications: Resistor-Less Multi-Function Bi-Quadratic Filter and Balanced Modulator;Journal of Circuits, Systems and Computers;2020-01-21
3. Low Power, High Performance CNTFET-Based SRAM Cell Designs;Advances in Computer and Electrical Engineering;2020
4. Reliable high-yield CNTFET-based 9T SRAM operating near threshold voltage region;Journal of Computational Electronics;2018-02-02
5. Layout Characterization and Power Density Analysis for Shorted-Gate and Independent-Gate 7nm FinFET Standard Cells;Proceedings of the 25th edition on Great Lakes Symposium on VLSI;2015-05-20
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