Limits of bias based assist methods in nano-scale 6T SRAM-Reference-Cited by-同舟云学术

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Limits of bias based assist methods in nano-scale 6T SRAM

Published:2010-03 Issue: Volume: Page:
ISSN:
Container-title:2010 11th International Symposium on Quality Electronic Design (ISQED)
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Author:

Mann Randy W.,Nalam Satyanand,Wang Jiajing,Calhoun Benton H.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5443864/5450389/05450413.pdf?arnumber=5450413

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Extensive Investigation on Even-Transistor-Configuration CMOS-based SRAM;Nanoscale Field Effect Transistors: Emerging Applications;2023-12-19

2. Are there monetary clusters in the Eurozone? The impact of ECB policy;Journal of Policy Modeling;2020-01

3. Capturing smart service systems: Development of a domain‐specific modelling language;Information Systems Journal;2019-11

4. In and Out of Place: Ethnography as ‘Journeying With’ Between Central and South Australia;Oceania;2018-10-18

5. Multiple Combined Write-Read Peripheral Assists in 6T FinFET SRAMs for Low-VMIN IoT and Cognitive Applications;Proceedings of the International Symposium on Low Power Electronics and Design;2018-07-23

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