A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface-Reference-Cited by-同舟云学术

A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface

Published:2012-04 Issue:4 Volume:47 Page:981-989
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Kim Chulbum,Ryu Jinho,Lee Taesung,Kim Hyunggon,Lim Jaewoo,Jeong Jaeyong,Seo Seonghwan,Jeon Hongsoo,Kim Bokeun,Lee Inyoul,Lee Dooseop,Kwak Pansuk,Cho Seongsoon,Yim Yongsik,Cho Changhyun,Jeong Woopyo,Park Kwangil,Han Jin-Man,Song Duheon,Kyung Kyehyun,Lim Young-Ho,Jun Young-Hyun

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/6173080/06151872.pdf?arnumber=6151872

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