A 16 nm 128 Mb SRAM in High-<formula formulatype="inline"> <tex Notation="TeX">$\kappa$</tex></formula> Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications-Reference-Cited by-同舟云学术

A 16 nm 128 Mb SRAM in High- $\kappa$ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications

Published:2015-01 Issue:1 Volume:50 Page:170-177
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Chen Yen-Huei,Chan Wei-Min,Wu Wei-Cheng,Liao Hung-Jen,Pan Kuo-Hua,Liaw Jhon-Jhy,Chung Tang-Hsuan,Li Quincy,Lin Chih-Yung,Chiang Mu-Chi,Wu Shien-Yang,Chang Jonathan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/6998099/06894644.pdf?arnumber=6894644

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