A 32-Gb MLC NAND Flash Memory With Vth Endurance Enhancing Schemes in 32 nm CMOS-Reference-Cited by-同舟云学术

A 32-Gb MLC NAND Flash Memory With Vth Endurance Enhancing Schemes in 32 nm CMOS

Published:2011-01 Issue:1 Volume:46 Page:97-106
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Lee Changhyuk,Lee Sok-Kyu,Ahn Sunghoon,Lee Jinhaeng,Park Wonsun,Cho Yongdeok,Jang Chaekyu,Yang Chulwoo,Chung Sanghwa,Yun In-Suk,Joo Byoungin,Jeong Byoungkwan,Kim Jeeyul,Kwon Jeakwan,Jin Hyunjong,Noh Yujong,Ha Jooyun,Sung Moonsoo,Choi Daeil,Kim Sanghwan,Choi Jeawon,Jeon Taeho,Park Heejoung,Yang Joong-Seob,Koh Yo-Hwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/5673672/05641590.pdf?arnumber=5641590

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