Author:
Lo Cheng-Hung,Huang Shi-Yu
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Cited by
97 articles.
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1. Comparison of Techniques for Reducing Leakage Current in SRAM: A Study of Gated VDD, MTCMOS, and Clamping Diode Techniques;2024 International Conference on Recent Advances in Electrical, Electronics, Ubiquitous Communication, and Computational Intelligence (RAEEUCCI);2024-04-17
2. Design of low power SRAM cells with increased read and write performance using Read - Write assist technique;e-Prime - Advances in Electrical Engineering, Electronics and Energy;2024-03
3. Design and Performance Benchmarking of 8T SRAM Cell using Dynamic Feedback Control;2023 IEEE Industrial Electronics and Applications Conference (IEACon);2023-11-06
4. Ultra-low Power FinFET SRAM Cell with Improved Stability Suitable for Low Power Applications;International Journal of Electronics and Telecommunications;2023-07-26
5. Energy-Efficient Single-Ended Read/Write 10T Near-Threshold SRAM;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-05