A 373-F² 0.21%-Native-BER EE SRAM Physically Unclonable Function With 2-D Power-Gated Bit Cells and VSS Bias-Based Dark-Bit Detection-Reference-Cited by-同舟云学术

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A 373-F² 0.21%-Native-BER EE SRAM Physically Unclonable Function With 2-D Power-Gated Bit Cells and VSS Bias-Based Dark-Bit Detection

Published:2020 Issue: Volume: Page:1-14
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Liu Kunyang^ORCID,Min Yue,Yang Xuan,Sun Hanfeng,Shinohara Hirofumi

Funder

ROHM Company Ltd.

Kitakyushu Foundation for the Advancement of Industry Science and Technology FAIS

VLSI Design and Education Center VDEC The University of Tokyo in collaboration with Cadence Design Systems Inc. and Mentor Graphics Inc.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/4359912/08957039.pdf?arnumber=8957039

Cited by 51 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tamper Resistant Reconfigurable Preamplifier Physical Unclonable Function With Self-Destruct;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2024-08

2. SRAM-Based PUF with Noise Immunity Achieving 0.58% Native BER in 55-nm CMOS;2024 IEEE International Symposium on Circuits and Systems (ISCAS);2024-05-19

3. A Two-Stage TMV SRAM PUF Preselection Method with Fewer ECC Resources;2024 IEEE 7th Advanced Information Technology, Electronic and Automation Control Conference (IAEAC);2024-03-15

4. Optical-Anisotropy-Exploited Irreproducible Functions Using Microwrinkles;ACS Applied Optical Materials;2024-03-07

5. A Design of 2-Stage Voltage Ramp-Up SRAM Physical Unclonable Function;Chinese Journal of Electronics;2024-03

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