Analysis of the Endurance of CMOS IC Elements to Failures after Charged Particle Strike-Reference-Cited by-同舟云学术

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Analysis of the Endurance of CMOS IC Elements to Failures after Charged Particle Strike

Published:2022-01-25 Issue: Volume: Page:
ISSN:
Container-title:2022 Conference of Russian Young Researchers in Electrical and Electronic Engineering (ElConRus)
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Author:

Smirnova Vera P.¹,Krupkina Tatiana Y.¹,Chaplygin Yury A.¹,Meschanov Vladimir D.²,Klyuchnikov Aleksey S.³,Panyshev Kirill A.³

Affiliation:

1. National Research University of Electronic Technology,Integrated Electronics and Microsystems Department,Moscow,Russia

2. «MERI-Microdesign» Limited Liability Company,Moscow,Russia

3. Molecular Electronics Research Institute (JSC MERI),Moscow,Russia

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9755448/9755449/09755791.pdf?arnumber=9755791

Reference8 articles.

1. Improving Integrated Circuit Performance Through the Application of Hardness-by-Design Methodology

2. Hsiao-Heng Kelin Lee Circuit and Layout Techniques for Soft-error-resilient Digital CMOS Circuits;Stanford University,2011

3. Charge Funneling in N- and P-Type Si Substrates

4. Soft Errors in Advanced Computer Systems

5. A Refined Electrical Model for Particle Strikes and its Impact on SEU Prediction

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