A proposed OEIC receiver using MESFET photodetector
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Atomic and Molecular Physics, and Optics
Link
http://xplorestaging.ieee.org/ielx4/50/16299/00754797.pdf?arnumber=754797
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural optimization and analysis of GaAs buried-gate OPFET for visible-light communication;Optical and Quantum Electronics;2020-11-17
2. Optical effects on the characteristics of a nanoscale SOI MOSFET with uniform doping profile;Optik;2014-07
3. High Sensitivity Photodetector Using Si∕Ge∕GaAs Metal Semiconductor Field Effect Transistor (MESFET);AIP Conference Proceedings;2011
4. Large-Signal Charge Control Modeling of Photoreceivers for Applications up to 40 Gb/s;IEEE Journal of Quantum Electronics;2009-07
5. Design and Analysis of a 20 Gbps Metal-Insulator-Field Effect Transistor Photoreceiver for the OptoElectronic Integrated Circuit Receiver Applications;Journal of Nanoelectronics and Optoelectronics;2008-12-01
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