Design and Analysis of a 20 Gbps Metal-Insulator-Field Effect Transistor Photoreceiver for the OptoElectronic Integrated Circuit Receiver Applications
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Published:2008-12-01
Issue:3
Volume:3
Page:307-315
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ISSN:1555-130X
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Container-title:Journal of Nanoelectronics and Optoelectronics
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language:en
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Short-container-title:Journal of Nanoelectronics and Optoelectronics
Author:
Balasubadra K.,Rajamani V.,Sankaranarayanan K.
Publisher
American Scientific Publishers
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials