Tandem Structure for Efficiency Improvement in GaN Based Light-Emitting Diodes-Reference-Cited by-同舟云学术

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Tandem Structure for Efficiency Improvement in GaN Based Light-Emitting Diodes

Published:2014-05 Issue:9 Volume:32 Page:1801-1806
ISSN:0733-8724
Container-title:Journal of Lightwave Technology
language:
Short-container-title:J. Lightwave Technol.

Author:

Tsai Miao-Chan,Leung Benjamin,Hsu Ta-Cheng,Kuo Yen-Kuang

Funder

National Science Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/50/6781021/06780638.pdf?arnumber=6780638

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent Progress in III‐Nitride Tunnel Junction Light‐Emitting Diodes;physica status solidi (RRL) – Rapid Research Letters;2024-02-03

2. Remote plasma chemical vapour deposition of group III-nitride tunnel junctions for LED applications;Light-Emitting Devices, Materials, and Applications;2019-03-01

3. Shockley-Read-Hall and Auger Recombination in Blue InGaN Tunnel-Junction Light-Emitting Diodes;physica status solidi (a);2018-07-12

4. Monolithic high performance InGaN/GaN white LEDs with a tunnel junction cascaded yellow and blue light-emitting structures;Optical Materials;2018-03

5. Design of GaN-Based Multicolor Tunnel-Junction Light-Emitting Diodes;IEEE Transactions on Electron Devices;2018-01

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