Shockley-Read-Hall and Auger Recombination in Blue InGaN Tunnel-Junction Light-Emitting Diodes-Reference-Cited by-同舟云学术

Shockley-Read-Hall and Auger Recombination in Blue InGaN Tunnel-Junction Light-Emitting Diodes

Published:2018-07-12 Issue:21 Volume:215 Page:1800271
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Chang Jih-Yuan¹^ORCID,Shih Ya-Hsuan²,Huang Man-Fang³,Chen Fang-Ming³,Kuo Yen-Kuang⁴^ORCID

Affiliation:

1. Center for Teacher Education, National Changhua University of Education; Changhua 500 Taiwan

2. Department of Photonics, National Cheng Kung University; Tainan 701 Taiwan

3. Institute of Photonics, National Changhua University of Education; Changhua 500 Taiwan

4. Department of Physics, National Changhua University of Education; Changhua 500 Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201800271/fullpdf

Reference34 articles.

1. Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions

2. Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop

3. Tandem Structure for Efficiency Improvement in GaN Based Light-Emitting Diodes

4. Theoretical Investigation of Efficient Green Tunnel-Junction Light-Emitting Diodes

5. Multi-color light emitting diode using polarization-induced tunnel junctions

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