A 9-kV Normally-on Vertical-Channel SiC JFET for Unipolar Operation

Author:

Veliadis V,Stewart E J,Hearne H,Snook M,Lelis A,Scozzie C

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

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3. (Ultra)Wide-Bandgap Vertical Power FinFETs;IEEE Transactions on Electron Devices;2020-10

4. Dynamic Modeling and Power Loss Analysis of High-Frequency Power Switches Based on GaN CAVET;IEEE Transactions on Electron Devices;2016-10

5. Design and Application of High-Voltage SiC JFET and Its Power Modules;IEEE Journal of Emerging and Selected Topics in Power Electronics;2016-09

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