Horizontal Current Bipolar Transistor With a Single Polysilicon Region for Improved High-Frequency Performance of BiCMOS ICs-Reference-Cited by-同舟云学术

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Horizontal Current Bipolar Transistor With a Single Polysilicon Region for Improved High-Frequency Performance of BiCMOS ICs

Published:2010-06 Issue:6 Volume:31 Page:534-536
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Suligoj Tomislav,Koričić Marko,Mochizuki Hidenori,Morita So-ichi,Shinomura Katsumi,Imai Hisaya

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5471728/05447632.pdf?arnumber=5447632

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Automated Characterization in Cryocon 22C at Wide Temperature Range using LabVIEW;2023 7th International Conference on Computer Applications in Electrical Engineering-Recent Advances (CERA);2023-10-27

2. Horizontal Current Bipolar Transistor DC Performance at Cryogenic Temperatures;IEEE Electron Device Letters;2023-10

3. The Effect of Collector Region Design on Large-Signal Performance of Horizontal Current Bipolar Transistor (HCBT);IEEE Transactions on Electron Devices;2023-07

4. A TCAD-Based Analysis of Substrate Bias Effect on Asymmetric Lateral SiGe HBT for THz Applications;IEEE Transactions on Electron Devices;2023-05

5. Investigation of the Electrical Performance of Voltage-Controlled-Oscillators in HCBT BiCMOS Technology;2022 International Conference on Smart Systems and Technologies (SST);2022-10-19

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