A TCAD-Based Analysis of Substrate Bias Effect on Asymmetric Lateral SiGe HBT for THz Applications
Author:
Affiliation:
1. IMS Laboratory, University of Bordeaux, Bordeaux, France
2. STMicroelectronics, Crolles, France
3. Department of Electrical Engineering, IIT Madras, Chennai, India
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10106527/10065392.pdf?arnumber=10065392
Reference29 articles.
1. (Invited) On the Potential of Lateral BJTs and SiGe HBTs in Advanced CMOS Technologies
2. Horizontal Current Bipolar Transistor With a Single Polysilicon Region for Improved High-Frequency Performance of BiCMOS ICs
3. On the Performance and Scaling of Symmetric Lateral Bipolar Transistors on SOI
4. Complementary thin-base symmetric lateral bipolar transistors on SOI;cai;IEDM Tech Dig,2011
5. Fabrication of horizontal current bipolar transistor (HCBT)
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characterization and Modeling of Silicon-on-Insulator Lateral Bipolar Junction Transistors at Liquid Helium Temperature;IEEE Transactions on Electron Devices;2024-06
2. Exploring Compact Modeling of SiGe HBTs in Sub-THz Range With HICUM;IEEE Transactions on Electron Devices;2024-01
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