Effect of Fast Components in Threshold-Voltage Shift on Bias Temperature Instability in High-$k$ MOSFETs-Reference-Cited by-同舟云学术

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Effect of Fast Components in Threshold-Voltage Shift on Bias Temperature Instability in High-$k$ MOSFETs

Published:2010-04 Issue:4 Volume:31 Page:287-289
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Minseok Jo ,Seonghyun Kim ,Seungjae Jung ,Ju-Bong Park ,Joonmyoung Lee ,Hyung-Suk Jung ,Choi R.,Hyunsang Hwang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5437354/05424078.pdf?arnumber=5424078

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exploration of gate trench module for vertical GaN devices;Microelectronics Reliability;2020-11

2. Detection of Stress-Induced Interface Trap Generation on High- $k$ Gated nMOSFETs in Real Time by Stress-and-Sense Charge Pumping Technique;IEEE Transactions on Electron Devices;2015-05

3. Effect of an Ultrathin SiN Cap Layer on the Bias Temperature Instability in Metal–Oxide–Semiconductor Field-Effect Transistors with HfSiON Gate Stacks;Japanese Journal of Applied Physics;2010-12-20

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