Dense heterogeneous integration for InP Bi-CMOS technology-Reference-Cited by-同舟云学术

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Dense heterogeneous integration for InP Bi-CMOS technology

Published:2009-05 Issue: Volume: Page:
ISSN:
Container-title:2009 IEEE International Conference on Indium Phosphide & Related Materials
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Author:

Royter Y.,Patterson P.R.,Li J.C.,Elliott K.R.,Hussain T.,Boag-O'Brien M.F.,Duvall J.R.,Montes M.C.,Hitko D.A.,Sewell J.S.,Sokolich M.,Chow D.H.,Brewer P.D.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4957851/5012404/05012453.pdf?arnumber=5012453

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Roadmapping the next generation of silicon photonics;Nature Communications;2024-01-25

2. An investigation of the DC and RF performance of InP DHBTs transferred to RF CMOS wafer substrate;Journal of Semiconductors;2018-04-18

3. Heterogeneous integration of GaAs pHEMT and Si CMOS on the same chip;Chinese Physics B;2016-06

4. SciFab -a wafer-level heterointegrated InP DHBT/SiGe BiCMOS foundry process for mm-wave applications;physica status solidi (a);2016-01-19

5. A High-Linearity, 30 GS/s Track-and-Hold Amplifier and Time Interleaved Sample-and-Hold in an InP-on-CMOS Process;IEEE Journal of Solid-State Circuits;2015-11

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