SciFab -a wafer-level heterointegrated InP DHBT/SiGe BiCMOS foundry process for mm-wave applications-Reference-Cited by-同舟云学术

SciFab -a wafer-level heterointegrated InP DHBT/SiGe BiCMOS foundry process for mm-wave applications

Published:2016-01-19 Issue:4 Volume:213 Page:909-916
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Weimann Nils G.¹,Stoppel Dimitri¹,Schukfeh Muhammed I.¹,Hossain Maruf¹,Al-Sawaf Thualfiqar¹,Janke Bernd¹,Doerner Ralf¹,Sinha Siddharta¹,Schmückle Franz-Josef¹,Krüger Olaf¹,Krozer Viktor¹,Heinrich Wolfgang¹,Lisker Marco²,Krüger Andreas²,Datsuk Anton²,Meliani Chafik²,Tillack Bernd²³

Affiliation:

1. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH), Gustav-Kirchhoff-Straße 4; 12489 Berlin Germany

2. IHP GmbH, Im Technologiepark 25; 15236 Frankfurt (Oder) Germany

3. TU Berlin, HFT4, Einsteinufer 25; 10587 Berlin Germany

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201532549/fullpdf

Reference22 articles.

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2. (Invited) Towards 0.7 Terahertz Silicon Germanium Heterojunction Bipolar Technology – The DOTSEVEN Project

3. First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process

4. J. Hacker M. Urteaga M. Seo A. Skalare R. Lin 2013 1 3

5. An InGaAs/InP DHBT With Simultaneous $\text{f}_{\boldsymbol \tau }/\text{f}_{\text {max}}~404/901$ GHz and 4.3 V Breakdown Voltage

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