A High-Precision De-Embedding Method for GaAs IPD Wafer-Level Testing-Reference-Cited by-同舟云学术

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A High-Precision De-Embedding Method for GaAs IPD Wafer-Level Testing

Published:2024-05-10 Issue: Volume: Page:765-767
ISSN:
Container-title:2024 2nd International Symposium of Electronics Design Automation (ISEDA)
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Author:

Lingmei Ma¹,Xiaotian Song¹,Tan Christine²,Wei Yao³,Rong Qian¹,Liang Wu¹

Affiliation:

1. Shanghai Institute of Microsystem and Information Technology,Key Laboratory of Materials for Integrated Circuits,Shanghai,China

2. Marketing and Business Development, Semitronix Corporation,Hangzhou,China

3. Shanghai Institute of Microsystem and Information Technology,Strategic Research Laboratory,Shanghai,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10616249/10617469/10617644.pdf?arnumber=10617644

Reference5 articles.

1. Comparison between L-2L and thru-reflect-line de-embedding methods for W-band CMOS amplifier design

2. Accuracy investigation of the de-embedding technique using open and short patterns for on-wafer RF characterization;Hirano

3. An Improved Ultrawideband Open-Short De-Embedding Method Applied up to 220 GHz

4. Accuracy tolerance analysis of the multimode TRL de-embedding technique

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