Comparison between L-2L and thru-reflect-line de-embedding methods for W-band CMOS amplifier design-Reference-Cited by-同舟云学术

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Comparison between L-2L and thru-reflect-line de-embedding methods for W-band CMOS amplifier design

Published:2017-08 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
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Author:

Abdo Ibrahim,Tokgoz Korkut Kaan,Fujimura Takuya,Okada Kenichi,Matsuzawa Akira

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8038157/8048085/08048281.pdf?arnumber=8048281

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Combination Method for Impedance Extraction of SMD Electronic Components Based on Full-Wave Simulation and De-Embedding Technique;IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences;2024-08-01

2. A High-Precision De-Embedding Method for GaAs IPD Wafer-Level Testing;2024 2nd International Symposium of Electronics Design Automation (ISEDA);2024-05-10

3. Analysis of the parameter extraction for on-chip transmission lines;IEICE Electronics Express;2020-09-25

4. Sub-Terahertz 300GHz Amplifier on CMOS for Ultra-High Data-Rate Wireless Communications;2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT);2020-09

5. A 273–301-GHz Amplifier With 21-dB Peak Gain in 65-nm Standard Bulk CMOS;IEEE Microwave and Wireless Components Letters;2019-05

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